[Hbi-svt] Updated Pitch Adapter Masks
Brian Eng
beng at jlab.org
Tue Apr 24 15:41:38 EDT 2012
Hi,
I've just received the updated masks from CNM-IMB. The main changes compared to the previous version are the mirroring of the chip pads and the widening of the bias pad on the HFCB side.
The new design files start with 2012-04-24 in this folder: http://clasweb.jlab.org/instrumentation/SVT/CAD/pitch_adapter/
There are AutoCAD DXF and DWG plus the original GDS mask
There are 2 outstanding "issues":
1) Do we want any of the metal fill areas to be left unpassivated to allow them to be used as test bond areas, if so which ones (both of the left/right most fills?).
2) Currently every 10th sensor pad is 25 microns higher/lower than the other pads measured from center (the pad is 50 microns bigger in height overall). Is this the preferred way of doing this? I vaguely recall Tammy having some issues targeting with the wire bonder, but can't recall the exact problem.
Please let me know if there are any questions/suggestions/changes/etc you'd like to see incorporated into this pitch adapter, as well as forwarding it to anyone else you think might need to look at it.
Thanks
Brian
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